| PART |
Description |
Maker |
| GHB-0805DU-Y GHB-0805DU-O GHB-0805DU-R GHB-0805DU- |
These chip-type LEDs utilize Aluminum Indium Gallium Phosphide (AlInGaP) material technology. 这些芯片型LED的利用铝铟镓磷化物（磷化铝铟镓）材料技术
|
International Light Technologies, Inc.
International Light Technologies Inc.
GILWAY[Gilway Technical Lamp]
|
| LX5530 |
InGaP HBT 4.5 6.0GHz Power Amplifier 的InGaP HBT 4.56.0GHz功率放大
|
Microsemi, Corp.
|
| CHV2707-QJ CHV2707-QJ-0G0T CHV2707-QJ-0G00 PB-CHV2 |
700 to 800 MHz InGaP HBT 5W Linear Power Amplifier 70000兆赫的InGaP HBT 5W线性功率放大器
|
Mimix Broadband, Inc.
|
| CGB7017-SC0609 |
DC-8.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier 直流8.0千兆赫的InGaP HBT，单片或包装符合增益模块放大
|
Mimix Broadband, Inc.
|
| PB-CGB7014-SC-0000 PB-CGB7014-SP-0000 |
DC-8.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 直流8.0千兆赫的InGaP HBT，MMIC的或包装，匹配增益模块放大器
|
Mimix Broadband, Inc.
|
| DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
HiPerFRED Epitaxial Diode with soft recovery
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| GS150TC25104 GS150TA25104 GS150TI25104 |
Gallium Arsenide Schottky Rectifier
4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE
|
IXYS Corporation
|
| DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation
Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| GN04005 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01021 |
Gallium Arsenide Devices
|
Panasonic
|
| GN04054N |
Gallium Arsenide Devices
|
Panasonic
|
| 3SK0241 |
Gallium Arsenide Devices
|
Panasonic
|
